Will Lead Spin Memory’s Product Strategy in Defense and Aerospace Markets to Meet Increasing Demand for Rad-Hard Memory
December 14, 2020
FREMONT, Calif. – December 14, 2020 – Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced that Thomas Boone, Ph.D. has been promoted to vice president of Defense and Aerospace for Spin Memory. In his new position, Dr. Boone will continue to connect with the DoD and other government agencies that need advanced memory and rad-hard technologies for strategic military and aerospace applications.
“In the last two years, Tom has built Spin Memory’s credibility across the spectrum of companies and government agencies – placing us in a leadership position for these valuable market segments,” said Tom Sparkman, CEO at Spin Memory. “Tom’s promotion to vice president recognizes his personal efforts and dedication, as well as Spin Memory’s continued commitment to these markets.”
Many defense and aerospace applications have to perform in harsh, high radiation environments. MRAM is becoming the preferred memory solution for these technologies because it is much less susceptible to radiation-caused memory “upsets” compared to SRAM, DRAM and flash memories. Spin Memory’s many MRAM IPs and innovations, including the PSC, enable MRAM to be both a non-volatile (NVM) and working (SRAM- and DRAM-like) mainstream memory option. These improvements, combined with MRAM’s inherent immunity to the effects of radiation, make MRAM the preferred solution for a growing list of military and aerospace applications.
“What started as an exploratory trip to the Midwest two years ago has now turned into an exciting next step for Spin Memory – and one that I am eager to help lead the company through,” said Dr. Boone. “Spin Memory’s leading IPs and MRAM innovations are bringing a new mainstream memory option to the market that is perfectly suited for modern defense and aerospace needs.”
Dr. Boone has over 15 years of experience in R&D management and project leadership within the microelectronics, data storage and solar power industries. With a background concentrated in semiconductor device physics, nanofabrication and magnetics, Dr. Boone holds over 25 U.S. patents and has been published in numerous peer-reviewed articles. He has a Ph.D. from Yale University in Electrical Engineering and Applied Physics.
About Spin Memory
Spin Memory, Inc. is the pre-eminent MRAM IP supplier. Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and products provide SRAM-like speed and endurance that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. For more information, please visit www.spinmemory.com.
The Hoffman Agency