PSCTM Equals Higher Data Retention With Lower Write Current.
Spin Memory’s Precessional Spin Current (PSC) structure can increase the spin-torque efficiency of any MRAM device by 40-70 percent – enabling dramatically higher data retention while consuming less power. This gain translates to retention times lengthening by a factor of 10,000 (e.g., 1 hour retention becomes more than 1 year retention) while reducing write current. Improved efficiency is critical for enabling MRAM to replace SRAM and DRAM in mobile, datacenter, and AI applications, as well as for improving retention and performance in high-temperature automotive applications.
Spin-torque efficiency is one of the core performance metrics of the pMTJ (perpendicular magnetic tunnel junction – the “bit” that stores the memory state in an MRAM memory). Spin-torque efficiency is the ratio between the thermal retention barrier, measuring how long data can be reliably stored in the memory, and the switching current necessary to change the value of the bit. In previous MRAM implementations, increasing the energy barrier to increase retention would require a proportional increase in write current – leading to higher power consumption and much faster wear-out of the pMTJ devices. The PSC structure is a breakthrough because it effectively decouples the static energy barrier that determines retention from the dynamic switching processes that govern the switching current. As a result, when PSC structure is added to any pMTJ.
Spin Memory’s PSC Structure Benefits:
Significant switching efficiency improvement
Lower Read/Write current
Enhanced free layer switching speed
Enhanced read disturb stability
Polarizer effect gets larger as device size gets smaller
Enhanced Retention and Lower Switching Current
Spin Memory Teams with Applied Materials to Produce a Comprehensive Embedded MRAM Solution