MTJs. Ultra High-Density. Ultra fast Read/Write Speeds.

Spin Memory’s unique pMTJ technologies enable ultra high-density pMTJs with faster Read/Write speeds. The company has a complete MRAM Back-End-of-Line (BEOL) fab in our Fremont, CA headquarters and continues to develop advanced pMTJ structures for SRAM, DRAM and non-volatile memory (NVM) applications.

Spin Memory pMTJ Engine Benefits:

  • Smaller and ultra high-density pMTJ
  • 10 ns Read/Write times
  • Sub-20nm pillars
  • Gb Densities
  • Advanced process nodes
  • Partnered with TEL

pMTJ Technology For Ultra-Small pMTJ Devices

Pitch = 60 nm, Diameter = 20 nm

For 7-10 nm CMOS logic node

Resources

Spin Memory Teams with Applied Materials to Produce a Comprehensive Embedded MRAM Solution

See the Press Release

Using MRAM in Place of SRAM

See the White Paper

MRAM Can Be >10,000X More Write-Enegry Efficient Than Flash

See the White Paper