Spin Memory Technologies. Innovation On Fast Forward.

DRAM and SRAM are reaching their limits when faced with the ever-growing demand for higher performance, more scale,
faster speed and lower power. To address these issues, Spin Memory has developed patented technologies that enable
STT-MRAM to cost-effectively replace DRAM and SRAM with a denser, lower-power and non-volatile solution.

Density

  • 1/3 – 1/5 the size of SRAM memory blocks
  • With 3D and MLC will be comparable to DRAM density

Scalability

  • 5-7nm CMOS logic nodes

SRAM-like memory performance, faster than DRAM

  • Endurance > 1E13 cycles
  • 10ns symmetric Read/Write speed (depending on process)

Fully random access

  • Any Read/Write sequence
  • Any Address sequence

Leakage currents

  • None

For new and existing memory markets

  • AI
  • Deep learning
  • Neuromorphics
  • IoT
  • and more

Proven Memory Technologies.

Spin Memory has developed patented materials and design techniques that enable MRAM to solve the scaling and power
problems of today’s memories. Our patented technologies enable STT-MRAM to cost-effectively replace DRAM and SRAM
with a denser, higher-endurance, lower-power and non-volatile solution.

Precessional Spin CurrentTM (PSCTM) Structure

Spin Memory’s PSC structure significantly increases pMTJ efficiency by 40 to 70% – enabling higher data retention while reducing write current.

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Endurance EngineTM Design Architecture

Spin Memory’s Endurance Engine enables up to 6 orders of magnitude improvement in endurance while enabling SRAM-like read and write speeds.

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MTJs

Spin Memory’s unique pMTJ technologies enable ultra high-density pMTJs with faster Read/Write speeds.

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Ultra High-Density 3D/MLC

Spin Memory’s 3D/MLC technologies are the basis of the company’s future products for magnetic DRAM Storage-Class Memory replacement.

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Resources

Spin Memory Teams with Applied Materials to Produce a Comprehensive Embedded MRAM Solution

See the Press Release

Using MRAM in Place of SRAM

See the White Paper

MRAM Can Be >10,000X More Write-Enegry Efficient Than Flash

See the White Paper