Spin Memory Technologies. Innovation On Fast Forward.
DRAM and SRAM are reaching their limits when faced with the ever-growing demand for higher performance, more scale,
faster speed and lower power. To address these issues, Spin Memory has developed patented technologies that enable
STT-MRAM to cost-effectively replace DRAM and SRAM with a denser, lower-power and non-volatile solution.
Spin Memory’s technologies work with any company’s MTJs and CMOS process to enable the industry’s fastest, highest-endurance MRAM solutions.
Density
- 1/3 – 1/5 the size of SRAM memory blocks
- With 3D and MLC will be comparable to DRAM density
Scalability
- 5-7nm CMOS logic nodes
SRAM-like memory performance, faster than DRAM
- Endurance > 1E13 cycles
- 10ns symmetric Read/Write speed (depending on process)
Fully random access
- Any Read/Write sequence
- Any Address sequence
Leakage currents
- None
For new and existing memory markets
- AI
- Deep learning
- Neuromorphics
- IoT
- and more
Proven Memory Technologies.
Spin Memory has developed patented materials and design techniques that enable MRAM to solve the scaling and power
problems of today’s memories. Our patented technologies enable STT-MRAM to cost-effectively replace DRAM and SRAM
with a denser, higher-endurance, lower-power and non-volatile solution.
Precessional Spin CurrentTM (PSCTM) Structure
Spin Memory’s PSC structure significantly increases pMTJ efficiency by 40 to 70% – enabling higher data retention while reducing write current.
Endurance EngineTM Design Architecture
Spin Memory’s Endurance Engine enables up to 6 orders of magnitude improvement in endurance while enabling SRAM-like read and write speeds.
MTJs
Spin Memory’s unique pMTJ technologies enable ultra high-density pMTJs with faster Read/Write speeds.
Ultra High-Density 3D/MLC
Spin Memory’s 3D/MLC technologies are the basis of the company’s future products for magnetic DRAM Storage-Class Memory replacement.