April 19, 2018


Dr. Mustafa Pinarbasi, CTO and SVP of Magnetics Technology at Spin Transfer Technologies, Inc (STT), will present during the Intermag 2018 Conference. STT is developing universal technologies with the potential to generate performance enhancements that will enable spin-transfer torque (STT)-MRAM to overhaul SRAM and DRAM. Dr. Pinarbasi will report on a significant enhancement of the spin-transfer torque efficiency of perpendicular magnetic tunnel junctions (pMTJ’s) utilizing a novel Precessional Spin Current (PSCTM) structure, also known as the Spin Polarizer.

STT-MRAM is considered the emerging memory class with the potential to fulfill the needs of modern memory applications. However, current iterations of STT- MRAM face several challenges that prevent them from overtaking Static and Dynamic Random-Access Memory (SRAM and DRAM), including lower efficiency and endurance. In his presentation, Dr. Pinarbasi will explain how the PSC structure for pMTJs provides drastic enhancements for STT-MRAM over a wide range of temperatures and sizes relevant for modern memory applications. Dr. Pinarbasi will also discuss how these improvements position STT-MRAM as an appealing candidate for replacement for SRAM and DRAM for a number of mobile, computing and industrial applications.


Friday, April 27, 2018 from 4:15 – 4:30 p.m. UTC+8


Marina Bay Sands Convention Center
Orchid IV
Singapore 018956

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. (STT) is developing STT-MRAM technologies that combine patented magnetics technologies, circuits and memory architectures to create the industry’s lowest-cost, highest-performance STT-MRAM memories. STT’s disruptive STT-MRAM solutions are potentially ideal replacements for embedded SRAMs as well as future DRAM devices. The company was established by Allied Minds and New York University. For more information, please visit www.spintransfer.com.

Media Contact:
Justin Gillespie
The Hoffman Agency
(925) 719-1097