August 29, 2016
WHAT: | Chief Technology Officer Mustafa Pinarbasi of Spin Transfer Technologies (STT), developer of a proprietary Orthogonal Spin Transfer Magneto-Resistive Random Access MRAM technology (OST-MRAMTM), will be presenting an invited paper at the SPIE Nanoscience and Engineering Conference. Dr. Pinarbasi will describe the capabilities of STT’s world-class R&D fab and present recent results on MRAM arrays and the development of proprietary perpendicular magnetic tunnel junctions (pMTJs) as small as 20nm. Additionally, a joint invited paper with New York University Professor Andrew Kent’s group will be discussing the time-resolved magnetization dynamics of orthogonal spin transfer devices. |
WHEN: | August 29, 2016 |
WHERE: | San Diego Convention Center |
INVITED PAPERS:
- Session 5a (MRAMs I) August 29, 2:20 p.m.:
Time-resolved measurement of magnetization dynamics and reversal in orthogonal spin transfer devices (joint paper between NYU and Spin Transfer Technologies)[Room 30D]- Session 6a (MRAMs II) August 29, 4:25 p.m.:
Performance of Co/Pt pinning-based perpendicular ST-MRAM arrays,
presented by STT CTO Mustafa Pinarbasi [Room 30D]About the conference: http://spie.org/conferences-and-exhibitions/optics-and-photonics
About Spin Transfer Technologies
Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM™. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost and scalability to smaller lithographic dimensions. For more information, visit www.spintransfer.com.
- Session 6a (MRAMs II) August 29, 4:25 p.m.: