August 29, 2016

WHAT:Chief Technology Officer Mustafa Pinarbasi of Spin Transfer Technologies (STT), developer of a proprietary Orthogonal Spin Transfer Magneto-Resistive Random Access MRAM technology (OST-MRAMTM), will be presenting an invited paper at the SPIE Nanoscience and Engineering Conference. Dr. Pinarbasi will describe the capabilities of STT’s world-class R&D fab and present recent results on MRAM arrays and the development of proprietary perpendicular magnetic tunnel junctions (pMTJs) as small as 20nm. Additionally, a joint invited paper with New York University Professor Andrew Kent’s group will be discussing the time-resolved magnetization dynamics of orthogonal spin transfer devices.
WHEN:August 29, 2016
WHERE:San Diego Convention Center


  • Session 5a (MRAMs I) August 29, 2:20 p.m.:
    Time-resolved measurement of magnetization dynamics and reversal in orthogonal spin transfer devices (joint paper between NYU and Spin Transfer Technologies)
    [Room 30D]
  • Session 6a (MRAMs II) August 29, 4:25 p.m.:
    Performance of Co/Pt pinning-based perpendicular ST-MRAM arrays,
    presented by STT CTO Mustafa Pinarbasi [Room 30D]

About the conference:

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost and scalability to smaller lithographic dimensions. For more information, visit