January 24, 2018

WHAT: Dr. Andrew J. Walker, Vice President of Products at Spin Transfer Technologies, a leading developer of high-speed, high-endurance ST-MRAM technologies, will be presenting during the Future Media session at the 2018 Persistent Memory Summit. Dr. Walker will review the cost, power and scale challenges with traditional SRAM and DRAM technologies; present recent advances in MRAM to address speed and endurance limitations; and highlight the inherent technical advantages that enable MRAM to provide a cost-effective replacement for SRAM and DRAM products.
WHEN: Wednesday, January 24, 2018 from 3:35 p.m. – 4 p.m. PT
WHERE: Westin San Jose
302 South Market Street
San Jose, CA 05113

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. (STT) is developing ST-MRAM technologies that uniquely combine patented magnetics technologies, circuits and memory architectures to create the industry’s lowest-cost, highest-performance ST-MRAM memories. STT’s disruptive ST-MRAM solutions are ideal replacements for embedded SRAMs as well as future DRAM devices. The company was established by Allied Minds and New York University. For more information, please visit www.spintransfer.com.


Media Contact:
Justin Gillespie
The Hoffman Agency
(925) 719-1097