January 18, 2017


WHAT:Barry Hoberman, CEO of Spin Transfer Technologies (STT), describes how ST-MRAM will enable a new tier of persistent memory —nanosecond-class persistent memories—during a panel session at this year’s Persistent Memory Summit. Today, most talk about persistent memory is around storage-class memories that create a new tier residing between DRAM and flash in terms of performance and cost. Spin Transfer Technologies believes that nanosecond-class persistent memories will combine the density and byte-addressability of DRAM with faster cycle times and persistence.

Mr. Hoberman will detail how this additional tier of nanosecond-class persistent memories provide the opportunity for improving performance, reducing power, and enabling new capabilities to systems and software.

Session: Enabling Nanosecond-Class Storage followed by:
Panel: Persistent Memory – What Does the Future Hold
January 18, 4:40 – 5:40 PM

Steffen Hellmold, Vice President, Technology Strategy, Western Digital
Barry Hoberman, CEO and Chairman, Spin Transfer Technologies
Doug Finke, Director of Product Marketing, Xitore

Additionally, Spin Transfer Technologies will demonstrate its MRAM technology during the summit.

WHEN:January 18, 2017
WHERE:Westin Hotel – San Jose, California

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAMTM

Media Contact:
Nancy Sheffield
The Hoffman Agency