January 18, 2017
WHAT: | Barry Hoberman, CEO of Spin Transfer Technologies (STT), describes how ST-MRAM will enable a new tier of persistent memory —nanosecond-class persistent memories—during a panel session at this year’s Persistent Memory Summit. Today, most talk about persistent memory is around storage-class memories that create a new tier residing between DRAM and flash in terms of performance and cost. Spin Transfer Technologies believes that nanosecond-class persistent memories will combine the density and byte-addressability of DRAM with faster cycle times and persistence. Mr. Hoberman will detail how this additional tier of nanosecond-class persistent memories provide the opportunity for improving performance, reducing power, and enabling new capabilities to systems and software. Session: Enabling Nanosecond-Class Storage followed by: Moderator: Additionally, Spin Transfer Technologies will demonstrate its MRAM technology during the summit. |
WHEN: | January 18, 2017 |
WHERE: | Westin Hotel – San Jose, California |
About Spin Transfer Technologies
Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAMTM Media Contact:
Nancy Sheffield
The Hoffman Agency
nsheffield@hoffman.com
408-975-3012