September 8, 2017

FREMONT, Calif. – Spin Transfer Technologies, Inc. (STT), a leading developer of high-speed, high-endurance MRAM technology, today announced the appointment of Andrew J. Walker as Vice President of Product.

With more than 30 years’ experience, Andy is widely known as a proven leader in the semiconductor memory industry and especially in 3-D NAND Flash. Most recently, Andy was the founder of Schiltron Corporation which was focused on innovative 3-D memory structures to improve performance, yields, and cost.

“Andy’s extensive background in 3-D memories and successful entrepreneurial track record will add tremendous value to STT,” said Tom Sparkman, CEO of STT. “Andy recognizes the parallels between NAND’s early adoption and where MRAM is today. We are so pleased he has chosen to join us.”

Andy has worked for several major semiconductor companies including Cypress Semiconductor, Artisan Components and Matrix Semiconductor. Prior to his work in Silicon Valley, Andy was with Philips Research Laboratories in Eindhoven, The Netherlands from 1985 to 1994 where he worked on CMOS and non-volatile memory research and development. He earned a Bachelor of Science degree in physics from the University of Dundee, Scotland and a Ph.D from the Technical University of Eindhoven, The Netherlands. He holds over 40 US patents.

“The semiconductor industry is running into fundamental roadblocks in scalability and performance. The most successful companies in this space are those that have combined a deep understanding of the physics and materials of the memory mechanism with the circuit and system expertise to sidestep apparent roadblocks,” said Walker. “Spin Transfer Technologies has the people with the power of this synergy who have already created fundamental IP, and are now ready to apply it in the growing magnetic memory arena. I am proud to be part of the team.”

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM™. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost, and scalability to smaller lithographic dimensions. For more information, visit

Media Contact:
Justin Gillespie
The Hoffman Agency
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