May 7, 2019
Spin Memory, the leading developer of MRAM technologies and a pre-eminent supplier of MRAM IP, will have Jeff Lewis, senior VP of business development, and Dr. Mustafa Pinarbasi, CTO and SVP of magnetics technology, both presenting and participating in panels at JEDEC’s Mobile & IOT Forum Korea, the GSA Memory+ Conference, and JEDEC’s Mobile & IOT Forum Taiwan.
Mobile & IOT Forum Korea: At JEDEC’s Mobile & IOT Forum Korea, Mr. Lewis will present for the “Enabling the Next Generation of IoT Edge Device Using MRAM” session. For this presentation, Mr. Lewis will discuss MRAM’s potential to improve devices at the edge, lowering power consumption, and enhancing endurance, to enable new possibilities for IoT devices at the edge.
Tuesday, May 14, 2019 from 2:50-3:10 p.m. UTC+9
El Tower Grace Hall
24 Yangjae-dong Seocho-gu
GSA Memory+ Conference: At the GSA Memory+ Conference, Mr. Lewis will host a session as well as participate in a panel during the event’s “Memory in Edge Computing and IoT” discussion. As part of the session, Mr. Lewis will talk about how MRAM is beginning to gain widespread adoption in the semiconductor industry as a non-volatile, flash-like memory, and will enable a new class of low-power edge computing applications through enhancements to today’s SoCs for IoT devices.
Wednesday, May 15, 2019 from 1:30-2:45 p.m. UTC+8
111 Pudong S Rd, Pudong Xinqu
Shanghai, China 200120
Mobile & IOT Forum Taiwan: At JEDEC’s Mobile & IOT Forum Taiwan, Dr. Pinarbasi will present for the “Enabling the Next Generation of IoT Edge Device Using MRAM” session. Dr. Pinarbasi’s presentation will cover the technological limitations that have been inhibiting massive deployment for IoT devices, and how a new generation of enhanced MRAM will overcome those issues and empower a new class of IoT Edge device.
Thursday, May 16, 2019 from 2:30-2:50 p.m. UTC+8
National Chiao Tung University
1001 University Road
Hsinchu, Taiwan 300, ROC
About Spin Memory
Spin Memory, Inc. (formerly Spin Transfer Technologies, Inc.) is the pre-eminent MRAM IP supplier. Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and products provide SRAM-like speed and endurance that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. For more information, please visit www.spinmemory.com.
The Hoffman Agency