Antoine Bruyns as Chief Financial Officer and Adrian Ong as Vice President of Engineering
February 26, 2019
FREMONT, Calif. – Spin Memory, Inc., the leading developer of embedded and stand-alone MRAM solutions, today announced the appointment of two new members to its leadership team. Antoine Bruyns was hired to be Spin Memory’s first chief financial officer and Adrian Ong has joined the company as vice president of engineering.
As chief financial officer, Antoine leads all elements of Spin Memory’s financial planning and analysis, accounting and reporting, merger and acquisitions, as well as investor relations. He brings 10 years of financial capital and strategy expertise that is critical for Spin Memory as the company transitions from focusing on research and development to offering a full suite of MRAM solutions to the market.
Previously, Antoine was a consultant at Bain & Co and an investment banker for J.P. Morgan managing IPOs such as DocuSign and Eventbrite, and the acquisitions of Cavium, Ring, and Blue Bottle Coffee. He also has a deep appreciation for entrepreneurship through his experience as the Managing Director at Riaktr where he acted the Start-up CEO of the company’s South African branch. Antoine earned a MBA from UC Berkeley’s Haas School of Business, a Bachelors in Business Engineering from the Université Libre de Bruxelles, along with both Bachelors and Masters degrees in Electrical Engineering and Computer Sciences from Ecole Polytechnique de Bruxelles.
As vice president of engineering, Adrian Ong is responsible for MRAM design and product development for Spin’s embedded and standalone memory technologies. Adrian brings nearly 30 years of experience in advanced semiconductor memory design and development, with a proven track record of developing new designs from concept to high volume production.
Previously, Adrian was VP of R&D at eveRAM Technology designing mobile SDRAM products. He has also held a number of executive and senior engineering positions at Grandis, Samsung Semiconductor, NeoMagic Corp, G-Link Technology, and Micron Technology — in addition to being a co-founder and VP of R&D at Inapac Technology, Inc. Adrian has over 60 US and foreign patents, a diploma in Electrical Engineering from Singapore Polytechnic, and an MSEE from the University of Arkansas in Fayetteville.
“With the recent investments and commercial agreements that are accelerating our ability to bring new MRAM memory solutions to the market, it was time to add to our executive team and both Antoine and Adrian bring skill sets that will strengthen our ability to do so,” said Tom Sparkman, CEO at Spin Memory. “Antoine’s expertise with corporate financing and strategic vision will allow Spin Memory to improve revenue streams with its new partners and customers, and Adrian’s deep experience with developing both DRAM and STT-MRAM products positions him perfectly to lead Spin’s engineering teams.”
About Spin Memory
Spin Memory, Inc. (formerly Spin Transfer Technologies, Inc.) is the pre-eminent MRAM IP supplier. Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and products provide SRAM-like speed and endurance that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. For more information, please visit www.spinmemory.com.
The Hoffman Agency