Spin Memory. Accelerating Innovation.

Spin Memory (previously Spin Transfer Technologies) is dedicated to solving the scaling and power problems of today’s memories. To meet these goals, Spin Memory is collaborating with world leaders to transform the semiconductor industry by offering MRAM solutions and products to replace on-chip SRAM, stand-alone persistent memories, and a range of other non-volatile memories. The company provides industry-leading MRAM device technology and custom MRAM memory design, as well as extensive technical support for all of its products.

Spin Memory is developing spin-transfer torque (STT)-MRAM technologies and products that can replace SRAM (static RAM) and ultimately DRAM (dynamic RAM) in both embedded and stand-alone applications. Already, Spin Memory has developed breakthrough technologies in both magnetics and CMOS circuits and architectures that bring STT-MRAM to the next generation. The result: MRAM operating speeds matching those of SRAM cache memories or DRAM — but with far lower cost, no leakage power and without the endurance and data retention limitations of other STT-MRAM implementations.

Spin Memory – with strategic partners Applied Materials and Arm – offers a full suite of MRAM technologies for both manufacturers and designers:

  • Foundries and Memory Manufacturers can improve the speed and efficiency of their own existing MRAM offerings, or can procure an entire MRAM solution for RAM-replacement as well as NVM
  • Memory designers – both stand-alone and embedded – can achieve SRAM speed and endurance using the company’s Endurance Engine and other advanced design capabilities.

As the pre-eminent MRAM IP supplier, Spin Memory is uniquely positioned to offer the industry’s highest-performance, highest-density STT-MRAM memories.

Spin Memory Advances STT-MRAM
To The Next-Generation With Proprietary Technologies.

The PSCTM structure increases pMTJ efficiency by 40 to 70% – enabling higher data retention while reducing write current

Unique pMTJ technologies enable ultra high-density pMTJs with faster Read/Write speeds

The Endurance EngineTM design architecture that enables 6 orders of magnitude improvement in endurance while enabling SRAM-like Read and Write speeds

Ultra high-density 3D/MLC technologies provide a path from research to the company’s future products for DRAM replacement

Spin Memory Brings MRAM Up To SRAM And
DRAM Application Requirements.


  • 1/3 – 1/5 the size of SRAM memory blocks


  • 5-7 nm CMOS logic nodes


  • Cleans up hard and soft error ‘tail bits’

SRAM-like memory performance, faster than DRAM

  • Endurance > 1E13 cycles
  • 10 ns symmetric Read/Write speed (depending on process)

Fully random access

  • Any Read/Write sequence
  • Any Address sequence

Leakage currents

  • None

For new and existing memory markets

  • AI
  • Deep learning
  • Neuromorphics
  • IoT
  • and more

Spin Memory Has Assembled A Team Of Experts To Advance MRAM Technologies.

Spin Memory has assembled a team of world leaders in magnetics, CMOS memory technologies, MRAM circuit and memory architects. Together, the teams are co-locating memory and processing to create the industry’s highest performance, fastest and lowest power MRAM technologies and devices.

With over 150 patents/patents pending Spin Memory is pioneering significant advances in MRAM magnetics, CMOS memory technologies and circuit designs.

Spin Transfer Technologies was established by Allied Minds and New York University.

Magnetics R&D Fab

The company has built a complete back-end magnetics R&D fab at its Fremont, CA headquarters. Spin Memory is breaking new ground with:

  • 5-day cycle times in our development process
  • Device features as small as 10nm – a significant competitive advantage in an industry where 100’s of fab cycles are required to bring a memory technology to commercial readiness


Through our commercial agreements with Arm and Applied Materials, Spin Memory is the nexus of the MRAM IP ecosystem.

  • Spin Memory will provide Arm its innovative Endurance Engine design architecture to develop a new line of embedded MRAM design IP. This MRAM design IP will address static random-access memory (SRAM) application in SoCs, with denser and lower power solutions than typically achieved with the current 6T SRAM cell-based IP.
  • Applied Materials and Spin Memory will create a comprehensive embedded MRAM solution. The solution brings together Applied’s industry-leading deposition and etch capabilities with Spin Memory’s MRAM process IP. The solution is designed to allow customers to quickly bring up an embedded MRAM manufacturing module and start producing world-class MRAM-enabled products for both non-volatile (flash-like) and SRAM-replacement applications.

By providing a full suite of industry solutions for companies manufacturing MRAM products as well as enabling the fabless design community, Spin Memory – in partnerships with Applied Materials and ARM – will establish MRAM as the next-gen memory solution.

The company is also developing persistent SRAM, Storage-Class memory (SCM), and ultimately persistent DRAM memory devices.

Virtually all major semiconductor applications will benefit from Spin Memory’s MRAM IP, including storage products, mobile devices, processors, automotive, Al, and a multitude of low-energy semiconductor products for the internet-of-things (IoT) market.

Through collaboration with industry leaders, and with our innovative circuits and magnetics, Spin Memory is transforming the semiconductor industry.

The technology industry has always had a central need for efficient memory, and new applications like AI, VR and IoT are driving new demands for lightning-fast, rapidly consumable data solutions. We believe our advances will propel MRAM to become a mainstream memory technology that will allow continued innovation across most cutting-edge and mainstream applications.

Tom Sparkman,