Through our commercial agreements with Arm and Applied Materials, Spin Memory is the nexus of the MRAM IP ecosystem.
- Spin Memory will provide Arm its innovative Endurance Engine design architecture to develop a new line of embedded MRAM design IP. This MRAM design IP will address static random-access memory (SRAM) application in SoCs, with denser and lower power solutions than typically achieved with the current 6T SRAM cell-based IP.
- Applied Materials and Spin Memory will create a comprehensive embedded MRAM solution. The solution brings together Applied’s industry-leading deposition and etch capabilities with Spin Memory’s MRAM process IP. The solution is designed to allow customers to quickly bring up an embedded MRAM manufacturing module and start producing world-class MRAM-enabled products for both non-volatile (flash-like) and SRAM-replacement applications.
By providing a full suite of industry solutions for companies manufacturing MRAM products as well as enabling the fabless design community, Spin Memory – in partnerships with Applied Materials and ARM – will establish MRAM as the next-gen memory solution.
The company is also developing persistent SRAM, Storage-Class memory (SCM), and ultimately persistent DRAM memory devices.
Virtually all major semiconductor applications will benefit from Spin Memory’s MRAM IP, including storage products, mobile devices, processors, automotive, Al, and a multitude of low-energy semiconductor products for the internet-of-things (IoT) market.
Through collaboration with industry leaders, and with our innovative circuits and magnetics, Spin Memory is transforming the semiconductor industry.