Spin Memory. Delivering Memory For The Digital Age.
Al, hyper-scale datacenters, self-driving cars, IoT, mobile and more. New innovations, applications and computing advancements are coming at a blistering pace — and memory is at the heart of all of them. With SRAM and DRAM hitting their size and power limits, Spin Memory is collaborating with world leaders to transform the semiconductor industry by offering MRAM solutions to replace on-chip SRAM and non-volatile memories — and by developing the next generation of persistent memories that match DRAM performance levels. Memory that will enable the digital experiences of today and tomorrow.
Through our commercial agreements with Arm and Applied Materials, Spin Memory is the nexus of the MRAM IP ecosystem.
Discover the Spin Memory Difference.
Spin Memory’s innovative circuits together with our advanced magnetics provide the industry’s highest-performance, and highest-density STT-MRAM memories.
1/3-1/5
Size of SRAM
Smaller sizes mean more memory, smaller dies.
>IE13 Cycles
Endurance
Performance that meets any application requirements.
10ns
Symmetric
R/W Speed
SRAM speed for any R/W pattern, any address.
5-7nm
Logic Nodes
Continues scaling well, unlike SRAM.
Non-Volatile
Zero Leakage
Bitcells retain state with zero applied power.
Proven Technologies
Spin Memory is using MRAM to solve the scaling and power problems of today’s memories. Our patented technologies enable STT-MRAM to cost-effectively replace DRAM and SRAM with a denser, lower-power and non-volatile solution.
Precessional Spin CurrentTM (PSCTM) Structure
Spin Memory’s PSC structure significantly increases pMTJ efficiency by 40 to 70% — enabling higher data retention while reducing write current.
Endurance EngineTM Design Architecture
Spin Memory’s Endurance Engine enables up to 6 orders of magnitude improvement in endurance while enabling SRAM like Read and Write speeds and works with any pMTJ.
MTJs
Spin Memory’s unique pMTJ technologies enable ultra high-density 2X diameter and smaller pMTJs with faster Read/Write speeds.
Ultra High-Density 3D/MLC
Spin Memory’s 3D/MLC technologies are the basis of the company’s future products for magnetic DRAM and Storage-Class Memory replacement.
Don’t Miss Out.
Keep up to date with Spin Memory’s latest breakthrough technologies in magnetics, CMOS circuits and architectures
